Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As

M. Yamanouchi, D. Chiba, F. Matsukura, T. Dietl, H. Ohno

Research output: Contribution to journalArticlepeer-review

208 Citations (Scopus)

Abstract

Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

Original languageEnglish
Article number096601
JournalPhysical review letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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