Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As

Michihiko Yamanouchi, D. Chiba, F. Matsukura, T. Dietl, H. Ohno

Research output: Contribution to journalArticle

203 Citations (Scopus)

Abstract

Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

Original languageEnglish
Article number096601
JournalPhysical Review Letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2006 Mar 13

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As'. Together they form a unique fingerprint.

  • Cite this