Variation of thermal stress in TSV structures caused by crystallinity of electroplated copper interconnections

Jiatong Liu, Ken Suzuki, Hideo Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, the change in residual stress in electroplated copper thin-film interconnections during thermal cycling was investigated from a view point of their initial crystallinity. The crystallinity is mainly dominated by the seed layer material for electroplating because of the lattice mismatch between the seed layer material and copper. By applying a ruthenium seed layer, which is effective for decreasing the lattice mismatch, the crystallinity of electroplated copper thin films was improved and their stability was very high during annealing up to 200°C. In addition, the amplitude of residual stress in the interconnection formed on the ruthenium seed layer decreased drastically during thermal cycling. Therefore, it is very important to improve the crystallinity of the interconnection for assuring the high thermal stability of 3D modules.

Original languageEnglish
Title of host publication2015 International 3D Systems Integration Conference, 3DIC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesTS8.5.1-TS8.5.5
ISBN (Electronic)9781467393850
DOIs
Publication statusPublished - 2015 Nov 20
EventInternational 3D Systems Integration Conference, 3DIC 2015 - Sendai, Japan
Duration: 2015 Aug 312015 Sep 2

Publication series

Name2015 International 3D Systems Integration Conference, 3DIC 2015

Other

OtherInternational 3D Systems Integration Conference, 3DIC 2015
Country/TerritoryJapan
CitySendai
Period15/8/3115/9/2

Keywords

  • Crystallinity
  • Electroplated copper interconnection
  • Residual stress
  • TSV

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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