Abstract
We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.
Original language | English |
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Title of host publication | Silicon Photonics VI |
Volume | 7943 |
DOIs | |
Publication status | Published - 2011 Apr 11 |
Event | Silicon Photonics VI - San Francisco, CA, United States Duration: 2011 Jan 23 → 2011 Jan 26 |
Other
Other | Silicon Photonics VI |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 11/1/23 → 11/1/26 |
Keywords
- Amorphous silicon
- Laser annealing
- Polycrystalline silicon
- Silicon photonic-wire waveguide
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics