Variation of optical properties by the crystalline phase transition of polycrystalline silicon

Hidenori Iwata; Tomohiro Kita; Hirohito Yamada

doi:10.1117/12.874435

Variation of optical properties by the crystalline phase transition of polycrystalline silicon

Hidenori Iwata, Tomohiro Kita, Hirohito Yamada

ENG - Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.

Original language	English
Title of host publication	Silicon Photonics VI
Volume	7943
DOIs	https://doi.org/10.1117/12.874435
Publication status	Published - 2011 Apr 11
Event	Silicon Photonics VI - San Francisco, CA, United States Duration: 2011 Jan 23 → 2011 Jan 26

Other

Other	Silicon Photonics VI
Country/Territory	United States
City	San Francisco, CA
Period	11/1/23 → 11/1/26

Keywords

Amorphous silicon
Laser annealing
Polycrystalline silicon
Silicon photonic-wire waveguide

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.874435

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title = "Variation of optical properties by the crystalline phase transition of polycrystalline silicon",

abstract = "We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.",

keywords = "Amorphous silicon, Laser annealing, Polycrystalline silicon, Silicon photonic-wire waveguide",

author = "Hidenori Iwata and Tomohiro Kita and Hirohito Yamada",

year = "2011",

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day = "11",

doi = "10.1117/12.874435",

language = "English",

isbn = "9780819484802",

volume = "7943",

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note = "Silicon Photonics VI ; Conference date: 23-01-2011 Through 26-01-2011",

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TY - GEN

T1 - Variation of optical properties by the crystalline phase transition of polycrystalline silicon

AU - Iwata, Hidenori

AU - Kita, Tomohiro

AU - Yamada, Hirohito

PY - 2011/4/11

Y1 - 2011/4/11

N2 - We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.

AB - We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.

KW - Amorphous silicon

KW - Laser annealing

KW - Polycrystalline silicon

KW - Silicon photonic-wire waveguide

UR - http://www.scopus.com/inward/record.url?scp=79953699646&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953699646&partnerID=8YFLogxK

U2 - 10.1117/12.874435

DO - 10.1117/12.874435

M3 - Conference contribution

AN - SCOPUS:79953699646

SN - 9780819484802

VL - 7943

BT - Silicon Photonics VI

T2 - Silicon Photonics VI

Y2 - 23 January 2011 through 26 January 2011

ER -

Variation of optical properties by the crystalline phase transition of polycrystalline silicon

Abstract

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Keywords

ASJC Scopus subject areas

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