Variation of crystal structure and optical properties of wurtzite-type oxide semiconductor alloys of β-Cu(Ga,Al)O2

Hiraku Nagatani, Yuki Mizuno, Issei Suzuki, Masao Kita, Naoki Ohashi, Takahisa Omata

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Band-gap engineering of β-CuGaO2 was demonstrated by the alloying of gallium with aluminum, that is, Cu(Ga1-xAlx)O2. The ternary wurtzite β-NaFeO2-type alloys were obtained in the range 0 ≤ x ≤ 0.7, and γ-LiAlO2-type phase appeared in the range 0.7 ≤ x ≤ 1. The energy band gap of wurtzite β-CuGaO2 was controlled in the range between 1.47 and 2.09 eV. A direct band gap for x < 0.6 and indirect band gap for x ≥ 0.6 were proposed based on the structural distortion in the β-NaFeO2-type phase and density functional theory (DFT) calculation of β-CuAlO2. The DFT calculation also indicated that the γ-LiAlO2-type phases appeared in 0.7 ≤ x ≤ 1 are also indirect-gap semiconductors.

Original languageEnglish
Article number235103
JournalJournal of Applied Physics
Volume121
Issue number23
DOIs
Publication statusPublished - 2017 Jun 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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