Variation of contrast of H/pn-Si(100) imaged with different emission electron microscopies

Hirokazu Fukidome, Masamichi Yoshimura, Kazuyuki Ueda, Fang Zhun Guo, Toyohiko Kinoshita, Keisuke Kobayashi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


H-terminated Si(100) with lateral p+-n junction has been imaged with emission electron microscopies as a model system where surface electric field is inhomogeneously distributed. It is clarified that mirror electron microscope has a higher sensitivity to the electric field parallel to the surface, compared to photoemission electron microscopy (PEEM) with either Hg-lamp (UV-PEEM) or synchrotron radiation to emit secondary electrons (SE-PEEM). On the other hand, intensity contrast between p-region and n-region arising from the difference in band bending, i.e., an electric field normal to surface, can be detected by UV-PEEM. It has been found in SE-PEEM that the intensity contrast becomes lost with higher kinetic energies.

Original languageEnglish
Pages (from-to)539-543
Number of pages5
Journale-Journal of Surface Science and Nanotechnology
Publication statusPublished - 2006 Jun 14
Externally publishedYes


  • Emission electron microscopy
  • Mirror electron microscopy
  • Photoemission electron microscopy
  • Si

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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