Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

S. Migita, T. Matsukawa, T. Mori, K. Fukuda, Y. Morita, W. Mizubayashi, K. Endo, Y. Liu, S. O'Uchi, M. Masahara, H. Ota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

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