Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

S. Migita, T. Matsukawa, T. Mori, K. Fukuda, Y. Morita, W. Mizubayashi, K. Endo, Y. Liu, S. O'Uchi, M. Masahara, H. Ota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Tunnel-FETs (TFETs) and MOSFETs are fabricated on a single SOI substrate using the same device parameters and process conditions, and the variation behavior of TFETs is studied by highlighting the difference with MOSFETs. It is found that the variation behavior characteristic to TFET is mainly caused by two factors. One is the dopant concentration at source region. It seems to affect to the uniformity of tunneling current along the channel width. A heavier source concentration is necessary to suppress the variation. Another factor is the channel edge configuration. Electric fields are easily concentrated at channel edge regions, and it lowers the threshold voltage of TFETs locally. It brings about an asymmetric variation behavior. Suppression of these factors is indispensable for the integration of TFET circuits.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsRoberto Bez, Gaudenzio Meneghesso, Paolo Pavan
PublisherIEEE Computer Society
Pages278-281
Number of pages4
ISBN (Electronic)9781479943784
DOIs
Publication statusPublished - 2014 Nov 5
Externally publishedYes
Event44th European Solid-State Device Research Conference, ESSDERC 2014 - Venezia Lido, Italy
Duration: 2014 Sep 222014 Sep 26

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other44th European Solid-State Device Research Conference, ESSDERC 2014
CountryItaly
CityVenezia Lido
Period14/9/2214/9/26

Keywords

  • tunnel-FET
  • variation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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