Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates

S. O'uchi, K. Sakamoto, Kazuhiko Endo, M. Masahara, T. Matsukawa, Y. X. Liu, M. Hioki, T. Nakagawa, T. Sekigawa, H. Koike, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish
Title of host publication2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages18-19
Number of pages2
DOIs
Publication statusPublished - 2008 Aug 14
Externally publishedYes
Event2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
Duration: 2008 Apr 212008 Apr 23

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period08/4/2108/4/23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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