Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates

S. O'uchi; K. Sakamoto; Kazuhiko Endo; M. Masahara; T. Matsukawa; Y. X. Liu; M. Hioki; T. Nakagawa; T. Sekigawa; H. Koike; E. Suzuki

doi:10.1109/VTSA.2008.4530778

Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates

S. O'uchi, K. Sakamoto, Kazuhiko Endo, M. Masahara, T. Matsukawa, Y. X. Liu, M. Hioki, T. Nakagawa, T. Sekigawa, H. Koike, E. Suzuki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Original language	English
Title of host publication	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages	18-19
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530778
Publication status	Published - 2008 Aug 14
Externally published	Yes
Event	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China Duration: 2008 Apr 21 → 2008 Apr 23

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	08/4/21 → 08/4/23

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VTSA.2008.4530778

Cite this

O'uchi, S., Sakamoto, K., Endo, K., Masahara, M., Matsukawa, T., Liu, Y. X., Hioki, M., Nakagawa, T., Sekigawa, T., Koike, H., & Suzuki, E. (2008). Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 18-19). [4530778] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530778

Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. / O'uchi, S.; Sakamoto, K.; Endo, Kazuhiko; Masahara, M.; Matsukawa, T.; Liu, Y. X.; Hioki, M.; Nakagawa, T.; Sekigawa, T.; Koike, H.; Suzuki, E.

2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 18-19 4530778 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

O'uchi, S, Sakamoto, K, Endo, K, Masahara, M, Matsukawa, T, Liu, YX, Hioki, M, Nakagawa, T, Sekigawa, T, Koike, H & Suzuki, E 2008, Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530778, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 18-19, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, Province of China, 08/4/21. https://doi.org/10.1109/VTSA.2008.4530778

O'uchi S, Sakamoto K, Endo K, Masahara M, Matsukawa T, Liu YX et al. Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 18-19. 4530778. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530778

O'uchi, S. ; Sakamoto, K. ; Endo, Kazuhiko ; Masahara, M. ; Matsukawa, T. ; Liu, Y. X. ; Hioki, M. ; Nakagawa, T. ; Sekigawa, T. ; Koike, H. ; Suzuki, E. / Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. pp. 18-19 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{4f4a81588ec64f2ea305962914964bfc,

title = "Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates",

author = "S. O'uchi and K. Sakamoto and Kazuhiko Endo and M. Masahara and T. Matsukawa and Liu, {Y. X.} and M. Hioki and T. Nakagawa and T. Sekigawa and H. Koike and E. Suzuki",

year = "2008",

month = aug,

day = "14",

doi = "10.1109/VTSA.2008.4530778",

language = "English",

isbn = "9781424416158",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "18--19",

booktitle = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA",

note = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 21-04-2008 Through 23-04-2008",

}

TY - GEN

T1 - Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates

AU - O'uchi, S.

AU - Sakamoto, K.

AU - Endo, Kazuhiko

AU - Masahara, M.

AU - Matsukawa, T.

AU - Liu, Y. X.

AU - Hioki, M.

AU - Nakagawa, T.

AU - Sekigawa, T.

AU - Koike, H.

AU - Suzuki, E.

PY - 2008/8/14

Y1 - 2008/8/14

UR - http://www.scopus.com/inward/record.url?scp=49049088108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49049088108&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2008.4530778

DO - 10.1109/VTSA.2008.4530778

M3 - Conference contribution

AN - SCOPUS:49049088108

SN - 9781424416158

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 18

EP - 19

BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

T2 - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 21 April 2008 through 23 April 2008

ER -

Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this