Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates

S. O'uchi; K. Sakamoto; Kazuhiko Endo; M. Masahara; T. Matsukawa; Y. X. Liu; M. Hioki; T. Nakagawa; T. Sekigawa; H. Koike; E. Suzuki

doi:10.1109/VTSA.2008.4530778

Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates

S. O'uchi, K. Sakamoto, Kazuhiko Endo, M. Masahara, T. Matsukawa, Y. X. Liu, M. Hioki, T. Nakagawa, T. Sekigawa, H. Koike, E. Suzuki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Original language	English
Title of host publication	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages	18-19
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530778
Publication status	Published - 2008 Aug 14
Externally published	Yes
Event	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China Duration: 2008 Apr 21 → 2008 Apr 23

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	08/4/21 → 08/4/23

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/VTSA.2008.4530778

Cite this

O'uchi, S., Sakamoto, K., Endo, K., Masahara, M., Matsukawa, T., Liu, Y. X., Hioki, M., Nakagawa, T., Sekigawa, T., Koike, H., & Suzuki, E. (2008). Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 18-19). [4530778] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530778

Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. / O'uchi, S.; Sakamoto, K.; Endo, Kazuhiko et al.

2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 18-19 4530778 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

O'uchi, S, Sakamoto, K, Endo, K, Masahara, M, Matsukawa, T, Liu, YX, Hioki, M, Nakagawa, T, Sekigawa, T, Koike, H & Suzuki, E 2008, Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530778, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 18-19, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, Province of China, 08/4/21. https://doi.org/10.1109/VTSA.2008.4530778

O'uchi S, Sakamoto K, Endo K, Masahara M, Matsukawa T, Liu YX et al. Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 18-19. 4530778. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2008.4530778

O'uchi, S. ; Sakamoto, K. ; Endo, Kazuhiko et al. / Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates. 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. pp. 18-19 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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title = "Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates",

author = "S. O'uchi and K. Sakamoto and Kazuhiko Endo and M. Masahara and T. Matsukawa and Liu, {Y. X.} and M. Hioki and T. Nakagawa and T. Sekigawa and H. Koike and E. Suzuki",

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AU - Masahara, M.

AU - Matsukawa, T.

AU - Liu, Y. X.

AU - Hioki, M.

AU - Nakagawa, T.

AU - Sekigawa, T.

AU - Koike, H.

AU - Suzuki, E.

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ER -

Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates

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