Variable temperature characterization of N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide thin film transistor

Matthieu Petit, Ryoma Hayakawa, Toyohiro Chikyow, Jonathan P. Hill, Katsuhiko Ariga, Yutaka Wakayama

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Organic thin film transistors (OTFT) based on N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide (TTCDI-5C) with Al or Au top-contact electrodes were deposited on SiO2 (200 nm)/p-Si (0 0 1) substrates. Carrier mobility was examined as a function of temperature in the range from 50 to 310 K. Two distinct carrier transfer behaviours were observed: temperature independent behaviour below 150 K and thermally activated behaviour above 150 K. Activation energies presented values of 85-130 meV depending on the metal electrodes (Au, Al), which can be attributed to the carrier traps at the interface and the energy-level offset between the lowest unoccupied molecular orbital (LUMO) and the work functions of the respective metals.

Original languageEnglish
Pages (from-to)1187-1190
Number of pages4
JournalOrganic Electronics
Volume10
Issue number6
DOIs
Publication statusPublished - 2009 Sep

Keywords

  • Atomic force microscopy
  • Carrier mobility
  • Organic semiconductors
  • Thin film growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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