Variable temperature characterization of N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide thin film transistor

Matthieu Petit; Ryoma Hayakawa; Toyohiro Chikyow; Jonathan P. Hill; Katsuhiko Ariga; Yutaka Wakayama

doi:10.1016/j.orgel.2009.05.026

Variable temperature characterization of N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide thin film transistor

Matthieu Petit, Ryoma Hayakawa, Toyohiro Chikyow, Jonathan P. Hill, Katsuhiko Ariga, Yutaka Wakayama

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Organic thin film transistors (OTFT) based on N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide (TTCDI-5C) with Al or Au top-contact electrodes were deposited on SiO₂ (200 nm)/p-Si (0 0 1) substrates. Carrier mobility was examined as a function of temperature in the range from 50 to 310 K. Two distinct carrier transfer behaviours were observed: temperature independent behaviour below 150 K and thermally activated behaviour above 150 K. Activation energies presented values of 85-130 meV depending on the metal electrodes (Au, Al), which can be attributed to the carrier traps at the interface and the energy-level offset between the lowest unoccupied molecular orbital (LUMO) and the work functions of the respective metals.

Original language	English
Pages (from-to)	1187-1190
Number of pages	4
Journal	Organic Electronics
Volume	10
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2009.05.026
Publication status	Published - 2009 Sep

Keywords

Atomic force microscopy
Carrier mobility
Organic semiconductors
Thin film growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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@article{3536aaee650d4a419e7ea6201ca6a518,

title = "Variable temperature characterization of N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide thin film transistor",

abstract = "Organic thin film transistors (OTFT) based on N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide (TTCDI-5C) with Al or Au top-contact electrodes were deposited on SiO2 (200 nm)/p-Si (0 0 1) substrates. Carrier mobility was examined as a function of temperature in the range from 50 to 310 K. Two distinct carrier transfer behaviours were observed: temperature independent behaviour below 150 K and thermally activated behaviour above 150 K. Activation energies presented values of 85-130 meV depending on the metal electrodes (Au, Al), which can be attributed to the carrier traps at the interface and the energy-level offset between the lowest unoccupied molecular orbital (LUMO) and the work functions of the respective metals.",

keywords = "Atomic force microscopy, Carrier mobility, Organic semiconductors, Thin film growth",

author = "Matthieu Petit and Ryoma Hayakawa and Toyohiro Chikyow and Hill, {Jonathan P.} and Katsuhiko Ariga and Yutaka Wakayama",

year = "2009",

month = sep,

doi = "10.1016/j.orgel.2009.05.026",

language = "English",

volume = "10",

pages = "1187--1190",

journal = "Organic Electronics: physics, materials, applications",

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}

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T1 - Variable temperature characterization of N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide thin film transistor

AU - Petit, Matthieu

AU - Hayakawa, Ryoma

AU - Chikyow, Toyohiro

AU - Hill, Jonathan P.

AU - Ariga, Katsuhiko

AU - Wakayama, Yutaka

PY - 2009/9

Y1 - 2009/9

N2 - Organic thin film transistors (OTFT) based on N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide (TTCDI-5C) with Al or Au top-contact electrodes were deposited on SiO2 (200 nm)/p-Si (0 0 1) substrates. Carrier mobility was examined as a function of temperature in the range from 50 to 310 K. Two distinct carrier transfer behaviours were observed: temperature independent behaviour below 150 K and thermally activated behaviour above 150 K. Activation energies presented values of 85-130 meV depending on the metal electrodes (Au, Al), which can be attributed to the carrier traps at the interface and the energy-level offset between the lowest unoccupied molecular orbital (LUMO) and the work functions of the respective metals.

AB - Organic thin film transistors (OTFT) based on N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide (TTCDI-5C) with Al or Au top-contact electrodes were deposited on SiO2 (200 nm)/p-Si (0 0 1) substrates. Carrier mobility was examined as a function of temperature in the range from 50 to 310 K. Two distinct carrier transfer behaviours were observed: temperature independent behaviour below 150 K and thermally activated behaviour above 150 K. Activation energies presented values of 85-130 meV depending on the metal electrodes (Au, Al), which can be attributed to the carrier traps at the interface and the energy-level offset between the lowest unoccupied molecular orbital (LUMO) and the work functions of the respective metals.

KW - Atomic force microscopy

KW - Carrier mobility

KW - Organic semiconductors

KW - Thin film growth

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