Abstract
Organic thin film transistors (OTFT) based on N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide (TTCDI-5C) with Al or Au top-contact electrodes were deposited on SiO2 (200 nm)/p-Si (0 0 1) substrates. Carrier mobility was examined as a function of temperature in the range from 50 to 310 K. Two distinct carrier transfer behaviours were observed: temperature independent behaviour below 150 K and thermally activated behaviour above 150 K. Activation energies presented values of 85-130 meV depending on the metal electrodes (Au, Al), which can be attributed to the carrier traps at the interface and the energy-level offset between the lowest unoccupied molecular orbital (LUMO) and the work functions of the respective metals.
Original language | English |
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Pages (from-to) | 1187-1190 |
Number of pages | 4 |
Journal | Organic Electronics |
Volume | 10 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2009 Sep |
Keywords
- Atomic force microscopy
- Carrier mobility
- Organic semiconductors
- Thin film growth
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering