Variability suppression of FinFETs by smoothing sidewall roughness using ion beam etching technology

T. Matsukawa, K. Endo, H. Akasaka, Y. Kamiya, M. Ikeda, K. Tsunekawa, T. Nakagawa, Y. X. Liu, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ion beam milling is successfully implemented for smoothing roughness of the fin sidewalls for the FinFETs with poly-crystalline TiN metal gate (MG). The Vt variability is improved significantly by smoothing the fin roughness without degradation of the carrier mobility. The suppressed Vt variability is interpreted as improved uniformity in the grain orientation of TiN which causes work function variation of the MG.

Original languageEnglish
Title of host publication2015 Silicon Nanoelectronics Workshop, SNW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485389
Publication statusPublished - 2015 Sep 24
Externally publishedYes
EventSilicon Nanoelectronics Workshop, SNW 2015 - Kyoto, Japan
Duration: 2015 Jun 142015 Jun 15

Publication series

Name2015 Silicon Nanoelectronics Workshop, SNW 2015

Other

OtherSilicon Nanoelectronics Workshop, SNW 2015
CountryJapan
CityKyoto
Period15/6/1415/6/15

Keywords

  • FinFETs
  • Ion beams
  • Logic gates
  • Milling
  • Process control
  • Smoothing methods
  • Tin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Variability suppression of FinFETs by smoothing sidewall roughness using ion beam etching technology'. Together they form a unique fingerprint.

Cite this