Variability origins of parasitic resistance in finFETs with silicided source/drain

Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Shinichi O'Uchi, Kunihiro Sakamoto, Meishoku Masahara

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Origins of parasitic resistance R para fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance R ext reflecting fin thickness T fin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces R para on average, it causes additional fluctuation of R para. Analyzing the correlation of the R para fluctuation with the fluctuation in T fin and the lateral growth of NiSi, the dominant origin of the R para fluctuation is specified to be the NiSi/n +-Si contact resistance.

Original languageEnglish
Article number6151016
Pages (from-to)474-476
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
Publication statusPublished - 2012 Apr 1
Externally publishedYes

Keywords

  • Fin-shaped FET (FinFET)
  • NiSi
  • parasitic resistance (R )
  • scaling
  • source/drain (S/D)
  • variability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Matsukawa, T., Liu, Y., Endo, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., O'Uchi, S., Sakamoto, K., & Masahara, M. (2012). Variability origins of parasitic resistance in finFETs with silicided source/drain. IEEE Electron Device Letters, 33(4), 474-476. [6151016]. https://doi.org/10.1109/LED.2012.2182755