Variability origins of FinFETs and perspective beyond 20nm node

Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Shin Ichi O'uchi, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

• WFV is dominant Vt variation source of FinFET for 20nm and beyond. • Parasitic resistance is one of the Ion variation sources as well as Vt. • WFV control is key issue to further exploit the potential variability robustness of undoped channel transistors (FDSOI and FinFETs).

Original languageEnglish
Title of host publicationIEEE International SOI Conference, SOI 2011
DOIs
Publication statusPublished - 2011 Dec 20
Externally publishedYes
Event2011 IEEE International SOI Conference, SOI 2011 - Tempe, AZ, United States
Duration: 2011 Oct 32011 Oct 6

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2011 IEEE International SOI Conference, SOI 2011
CountryUnited States
CityTempe, AZ
Period11/10/311/10/6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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