Variability in FinFET SRAM cells

Kazuhiko Endo, S. O'Uchi, T. Matsukawa, Y. Liu, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Double-gate (DG) device technology has been proposed and investigated for many years. Variability of the device due to the various random sources is increasing and will reduce the yield of the circuit. This paper presents variability issues in the scaled FinFETs and their effects on the SRAM performance. The effectiveness of Vth controllable independent-DG technology to enhance circuit performance is also shown.

Original languageEnglish
Title of host publicationSemiconductors, Dielectrics, and Metals for Nanoelectronics 13
EditorsS. Kar, D. Misra, K. Kita, D. Landheer
PublisherElectrochemical Society Inc.
Pages141-147
Number of pages7
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015 Jan 1
Externally publishedYes
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting - Phoenix, United States
Duration: 2015 Oct 112015 Oct 15

Publication series

NameECS Transactions
Number5
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period15/10/1115/10/15

ASJC Scopus subject areas

  • Engineering(all)

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