Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the Vth in the FinFET occurs and the standard deviations of the Vth of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the Vth variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.
- Metal gate (MG)
- Work function (WF)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering