Variability analysis of TiN FinFET SRAM cells and its compensation by independent-DG FinFETs

Kazuhiko Endo; Shin Ichi O'Uchi; Yuki Ishikawa; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Junichi Tsukada; Hiromi Yamauchi; Meishoku Masahara

doi:10.1109/LED.2010.2062483

Variability analysis of TiN FinFET SRAM cells and its compensation by independent-DG FinFETs

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the V_th-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.

Original language	English
Article number	5560721
Pages (from-to)	1095-1097
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	10
DOIs	https://doi.org/10.1109/LED.2010.2062483
Publication status	Published - 2010 Oct
Externally published	Yes

Keywords

FinFET
SRAM
independent double gate (IDG)
metal gate (MG)
variation
work function (WF)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2062483

Cite this

@article{19a09e88ae264e13beafc89de6638dbe,

title = "Variability analysis of TiN FinFET SRAM cells and its compensation by independent-DG FinFETs",

abstract = "The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.",

keywords = "FinFET, SRAM, independent double gate (IDG), metal gate (MG), variation, work function (WF)",

author = "Kazuhiko Endo and O'Uchi, {Shin Ichi} and Yuki Ishikawa and Yongxun Liu and Takashi Matsukawa and Kunihiro Sakamoto and Junichi Tsukada and Hiromi Yamauchi and Meishoku Masahara",

note = "Funding Information: Manuscript received May 28, 2010; revised July 15, 2010; accepted July 15, 2010. Date of publication September 2, 2010; date of current version September 24, 2010. This work was supported in part by NEDO under the Development of Nanoelectronic Device Technology. The review of this letter was arranged by Editor J. Cai. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

year = "2010",

month = oct,

doi = "10.1109/LED.2010.2062483",

language = "English",

volume = "31",

pages = "1095--1097",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Variability analysis of TiN FinFET SRAM cells and its compensation by independent-DG FinFETs

AU - Endo, Kazuhiko

AU - O'Uchi, Shin Ichi

AU - Ishikawa, Yuki

AU - Liu, Yongxun

AU - Matsukawa, Takashi

AU - Sakamoto, Kunihiro

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Masahara, Meishoku

N1 - Funding Information: Manuscript received May 28, 2010; revised July 15, 2010; accepted July 15, 2010. Date of publication September 2, 2010; date of current version September 24, 2010. This work was supported in part by NEDO under the Development of Nanoelectronic Device Technology. The review of this letter was arranged by Editor J. Cai. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010/10

Y1 - 2010/10

N2 - The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.

AB - The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.

KW - FinFET

KW - SRAM

KW - independent double gate (IDG)

KW - metal gate (MG)

KW - variation

KW - work function (WF)

UR - http://www.scopus.com/inward/record.url?scp=77957605907&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957605907&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2062483

DO - 10.1109/LED.2010.2062483

M3 - Article

AN - SCOPUS:77957605907

SN - 0741-3106

VL - 31

SP - 1095

EP - 1097

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 5560721

ER -

Variability analysis of TiN FinFET SRAM cells and its compensation by independent-DG FinFETs

Abstract

Keywords

ASJC Scopus subject areas

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