Variability analysis of TiN FinFET SRAM cells and its compensation by independent-DG FinFETs

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.

Original languageEnglish
Article number5560721
Pages (from-to)1095-1097
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number10
DOIs
Publication statusPublished - 2010 Oct
Externally publishedYes

Keywords

  • FinFET
  • SRAM
  • independent double gate (IDG)
  • metal gate (MG)
  • variation
  • work function (WF)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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