Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Variability of the TiN FinFET SRAM cell performance is comprehensively studied. It is found that the static noise margin (SNM) variation of the SRAM cell is due to the Vth variation of FinFETs caused by the work function variation (WFV) of the TiN metal-gate. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully compensates not only the random variation but also the systematic variation problems in SRAM performance. As a result, IDG-FinFET technology enables 0.5 V SRAM operation with a high cell stability.

Original languageEnglish
Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages124-125
Number of pages2
DOIs
Publication statusPublished - 2010 Oct 20
Externally publishedYes
Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan, Province of China
Duration: 2010 Apr 262010 Apr 28

Publication series

NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Other

Other2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Country/TerritoryTaiwan, Province of China
CityHsin Chu
Period10/4/2610/4/28

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture

Fingerprint

Dive into the research topics of 'Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET'. Together they form a unique fingerprint.

Cite this