Variability analysis of scaled crystal channel and poly-Si channel FinFETs

Yongxun Liu; Takahiro Kamei; Takashi Matsukawa; Kazuhiko Endo; Shinichi O'Uchi; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Tetsuro Hayashida; Kunihiro Sakamoto; Atsushi Ogura; Meishoku Masahara

doi:10.1109/TED.2011.2178850

Variability analysis of scaled crystal channel and poly-Si channel FinFETs

Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The threshold voltage V _t variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal-oxide-semiconductor field-effect transistors (FinFETs) with different gate oxide thicknesses T _ox has been systematically analyzed. By investigating the T _ox dependence of V _t variations in crystal channel FinFETs, the gate-stack origin sources, i.e., work function (φm) variation and gate oxide charge (Q _ox) variation sources, were successfully separated. It was found that the atomically flat Si-fin sidewall channels fabricated by the orientation-dependent wet etching contribute to the reduction of gate-stack origin V _t variations. Moreover, it was experimentally found that the standard V _t deviation (σ V _t) of poly-Si channel FinFETs is three times higher than that of crystal channel ones, and a good subthreshold slope in the poly-Si channel FinFETs was obtained with gate length L _g down to poly-Si grain size.

Original language	English
Article number	6127911
Pages (from-to)	573-581
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	3
DOIs	https://doi.org/10.1109/TED.2011.2178850
Publication status	Published - 2012 Mar
Externally published	Yes

Keywords

Crystal channel
fin-type metal-oxide-semiconductor field-effect transistor (FinFET)
gate work function
poly-Si channel
threshold voltage (V )
variability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2011.2178850

Cite this

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title = "Variability analysis of scaled crystal channel and poly-Si channel FinFETs",

abstract = "The threshold voltage V t variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal-oxide-semiconductor field-effect transistors (FinFETs) with different gate oxide thicknesses T ox has been systematically analyzed. By investigating the T ox dependence of V t variations in crystal channel FinFETs, the gate-stack origin sources, i.e., work function (φm) variation and gate oxide charge (Q ox) variation sources, were successfully separated. It was found that the atomically flat Si-fin sidewall channels fabricated by the orientation-dependent wet etching contribute to the reduction of gate-stack origin V t variations. Moreover, it was experimentally found that the standard V t deviation (σ V t) of poly-Si channel FinFETs is three times higher than that of crystal channel ones, and a good subthreshold slope in the poly-Si channel FinFETs was obtained with gate length L g down to poly-Si grain size.",

keywords = "Crystal channel, fin-type metal-oxide-semiconductor field-effect transistor (FinFET), gate work function, poly-Si channel, threshold voltage (V ), variability",

author = "Yongxun Liu and Takahiro Kamei and Takashi Matsukawa and Kazuhiko Endo and Shinichi O'Uchi and Junichi Tsukada and Hiromi Yamauchi and Yuki Ishikawa and Tetsuro Hayashida and Kunihiro Sakamoto and Atsushi Ogura and Meishoku Masahara",

note = "Funding Information: Manuscript received August 10, 2011; revised October 12, 2011 and November 21, 2011; accepted November 30, 2011. Date of publication January 10, 2012; date of current version February 23, 2012. This work was supported in part by the Development of Nanoelectronics Device Technology of NEDO, Japan. The review of this paper was arranged by Editor Y. Momiyama.",

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doi = "10.1109/TED.2011.2178850",

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T1 - Variability analysis of scaled crystal channel and poly-Si channel FinFETs

AU - Liu, Yongxun

AU - Kamei, Takahiro

AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - O'Uchi, Shinichi

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Ishikawa, Yuki

AU - Hayashida, Tetsuro

AU - Sakamoto, Kunihiro

AU - Ogura, Atsushi

AU - Masahara, Meishoku

N1 - Funding Information: Manuscript received August 10, 2011; revised October 12, 2011 and November 21, 2011; accepted November 30, 2011. Date of publication January 10, 2012; date of current version February 23, 2012. This work was supported in part by the Development of Nanoelectronics Device Technology of NEDO, Japan. The review of this paper was arranged by Editor Y. Momiyama.

PY - 2012/3

Y1 - 2012/3

N2 - The threshold voltage V t variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal-oxide-semiconductor field-effect transistors (FinFETs) with different gate oxide thicknesses T ox has been systematically analyzed. By investigating the T ox dependence of V t variations in crystal channel FinFETs, the gate-stack origin sources, i.e., work function (φm) variation and gate oxide charge (Q ox) variation sources, were successfully separated. It was found that the atomically flat Si-fin sidewall channels fabricated by the orientation-dependent wet etching contribute to the reduction of gate-stack origin V t variations. Moreover, it was experimentally found that the standard V t deviation (σ V t) of poly-Si channel FinFETs is three times higher than that of crystal channel ones, and a good subthreshold slope in the poly-Si channel FinFETs was obtained with gate length L g down to poly-Si grain size.

AB - The threshold voltage V t variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal-oxide-semiconductor field-effect transistors (FinFETs) with different gate oxide thicknesses T ox has been systematically analyzed. By investigating the T ox dependence of V t variations in crystal channel FinFETs, the gate-stack origin sources, i.e., work function (φm) variation and gate oxide charge (Q ox) variation sources, were successfully separated. It was found that the atomically flat Si-fin sidewall channels fabricated by the orientation-dependent wet etching contribute to the reduction of gate-stack origin V t variations. Moreover, it was experimentally found that the standard V t deviation (σ V t) of poly-Si channel FinFETs is three times higher than that of crystal channel ones, and a good subthreshold slope in the poly-Si channel FinFETs was obtained with gate length L g down to poly-Si grain size.

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KW - fin-type metal-oxide-semiconductor field-effect transistor (FinFET)

KW - gate work function

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KW - threshold voltage (V )

KW - variability

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Variability analysis of scaled crystal channel and poly-Si channel FinFETs

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Keywords

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