Variability analysis of scaled crystal channel and poly-Si channel FinFETs

Yongxun Liu; Takahiro Kamei; Takashi Matsukawa; Kazuhiko Endo; Shinichi O'Uchi; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Tetsuro Hayashida; Kunihiro Sakamoto; Atsushi Ogura; Meishoku Masahara

doi:10.1109/TED.2011.2178850

Variability analysis of scaled crystal channel and poly-Si channel FinFETs

Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The threshold voltage V _t variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal-oxide-semiconductor field-effect transistors (FinFETs) with different gate oxide thicknesses T _ox has been systematically analyzed. By investigating the T _ox dependence of V _t variations in crystal channel FinFETs, the gate-stack origin sources, i.e., work function (φm) variation and gate oxide charge (Q _ox) variation sources, were successfully separated. It was found that the atomically flat Si-fin sidewall channels fabricated by the orientation-dependent wet etching contribute to the reduction of gate-stack origin V _t variations. Moreover, it was experimentally found that the standard V _t deviation (σ V _t) of poly-Si channel FinFETs is three times higher than that of crystal channel ones, and a good subthreshold slope in the poly-Si channel FinFETs was obtained with gate length L _g down to poly-Si grain size.

Original language	English
Article number	6127911
Pages (from-to)	573-581
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	3
DOIs	https://doi.org/10.1109/TED.2011.2178850
Publication status	Published - 2012 Mar 1
Externally published	Yes

Keywords

Crystal channel
fin-type metal-oxide-semiconductor field-effect transistor (FinFET)
gate work function
poly-Si channel
threshold voltage (V )
variability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Variability analysis of scaled crystal channel and poly-Si channel FinFETs. / Liu, Yongxun; Kamei, Takahiro; Matsukawa, Takashi; Endo, Kazuhiko; O'Uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Hayashida, Tetsuro; Sakamoto, Kunihiro; Ogura, Atsushi; Masahara, Meishoku.

In: IEEE Transactions on Electron Devices, Vol. 59, No. 3, 6127911, 01.03.2012, p. 573-581.

Research output: Contribution to journal › Article › peer-review

Liu, Yongxun ; Kamei, Takahiro ; Matsukawa, Takashi ; Endo, Kazuhiko ; O'Uchi, Shinichi ; Tsukada, Junichi ; Yamauchi, Hiromi ; Ishikawa, Yuki ; Hayashida, Tetsuro ; Sakamoto, Kunihiro ; Ogura, Atsushi ; Masahara, Meishoku. / Variability analysis of scaled crystal channel and poly-Si channel FinFETs. In: IEEE Transactions on Electron Devices. 2012 ; Vol. 59, No. 3. pp. 573-581.

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Variability analysis of scaled crystal channel and poly-Si channel FinFETs

Abstract

Keywords

ASJC Scopus subject areas

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