Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization

Seid Hadi Rasouli, Kazuhiko Endo, Kaustav Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

FinFET is considered as the most likely candidate to substitute bulk CMOS technology. FinFET-based design, however, requires special attention due to its exclusive properties such as width quantization and electrical confinement (quantummechanical effect) even in subthreshold regime. Considering these exclusive properties of FinFETs, the sources of process variations and their effects on FinFET-based circuit characteristics can be significantly different from that in bulk CMOS devices. This paper identifies a new source of random process variation due to the gate work-function variation and resulting electrical confinement in emerging high-k/metal-gate FinFET devices. In order to capture the effect of the variations on the characteristics of multifin FinFETs (considering their width quantization property), this paper also presents a new statistical framework to accurately predict the effective threshold voltage of multifin FinFET devices. This framework is subsequently used to predict the leakage profile of FinFET-based SRAM cells. Since FinFETs are optimal for ultra-low-voltage operations due to near-ideal subthreshold swing (60 mV/dec), we focus on FinFET-based SRAM (including subthreshold SRAM) design. Contrary to the low sensitivity of the static noise margin (SNM) to the width of the pull-down devices in bulk-CMOS subthreshold SRAMs, our analysis shows, for the first time, the significant impact of employing multifin pull-down devices on the SNM of subthreshold FinFET SRAMs.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages505-512
Number of pages8
ISBN (Print)9781605588001
DOIs
Publication statusPublished - 2009 Jan 1
Externally publishedYes
Event2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009 - San Jose, CA, United States
Duration: 2009 Nov 22009 Nov 5

Publication series

NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
ISSN (Print)1092-3152

Other

Other2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009
CountryUnited States
CitySan Jose, CA
Period09/11/209/11/5

ASJC Scopus subject areas

  • Software
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

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    Rasouli, S. H., Endo, K., & Banerjee, K. (2009). Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization. In Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009 (pp. 505-512). [5361245] (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1145/1687399.1687495