Vapor-liquid-solid growth of III-nitride nanowires and heterostructures by metal-organic chemical vapor deposition

J. Su, M. Gherasimova, G. Cui, J. Han, S. Lim, D. Ciuparu, L. Pfefferle, Y. He, A. V. Nurmikko, C. Broadbridge, A. Lehman, T. Onuma, M. Kurimoto, S. F. Chichibu

Research output: Contribution to journalConference articlepeer-review

Abstract

We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E 2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Original languageEnglish
Article numberE12.4
Pages (from-to)753-758
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume831
Publication statusPublished - 2005
Externally publishedYes
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 2004 Nov 292004 Dec 2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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