Van Hove singularities as a result of quantum confinement: The origin of intriguing physical properties in Pb thin films

Yu Jie Sun, S. Souma, Wen Juan Li, T. Sato, Xie Gang Zhu, Guang Wang, Xi Chen, Xu Cun Ma, Qi Kun Xue, Jin Feng Jia, T. Takahashi, T. Sakurai

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS) have been used to study the electronic structure of Pb thin films grown on a Si(111) substrates. The experiments reveal that the electronic structure near the Fermi energy is dominated by a set of m-shaped subbands because of strong quantum confinement in the films, and the tops of the m-shaped subbands form an intriguing ring-like Van Hove singularity. Combined with theoretical calculations, we show that it is the Van Hove singularity that leads to an extremely high density of states near the Fermi energy and the recently reported strong oscillations (with a period of two monolayers) in various properties of Pb films.

Original languageEnglish
Pages (from-to)800-806
Number of pages7
JournalNano Research
Volume3
Issue number11
DOIs
Publication statusPublished - 2010

Keywords

  • Angle-resolved photoemission spectroscopy (ARPES)
  • Pb film
  • Scanning tunneling spectroscopy (STS)
  • Van Hove singularity

ASJC Scopus subject areas

  • Materials Science(all)
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Van Hove singularities as a result of quantum confinement: The origin of intriguing physical properties in Pb thin films'. Together they form a unique fingerprint.

Cite this