Valence state of Ti in conductive nanowires in sapphire

Teruyasu Mizoguchi, Masaki Sakurai, Atsutomo Nakamura, Katsuyuki Matsunaga, Isao Tanaka, Takahisa Yamamoto, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    25 Citations (Scopus)


    In order to reveal the valence state of Ti in conductive nanowires in sapphire, near-edge x-ray-absorption fine structures (NEXAFS) were observed. From experimental and theoretical studies on NEXAFS of reference compounds including rutile, anatase, and Ti2O3, it was found that the valence state of Ti can be identified by regarding the positions of the spectral onset and the shoulder in the main peak of Ti-K NEXAFS. The valence states of Ti doped Al2O3 polycrystalline specimens which were annealed at oxidized and reduced atmospheres were determined to be +4 and +3, respectively. The solubility limit of Ti in Al2O3 polycrystal was found to be between 1000 ppm to 1.0% at the both atmospheres. The spectrum from Ti nanowires in sapphire has a lot of similarities to the reduced specimen, the valence state was therefore concluded to be +3.

    Original languageEnglish
    Article number153101
    Pages (from-to)153101-1-153101-4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Issue number15
    Publication statusPublished - 2004 Oct 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics


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