Valence number transition and silicate formation of cerium oxide films on Si(100)

M. Mamatrishat, M. Kouda, K. Kakushima, H. Nohira, P. Ahmet, Y. Kataoka, A. Nishiyama, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Interface reactions of a Ce-oxide layer with Si(100) wafers have been characterized by X-ray photoelectron spectroscopy. The ratio of Ce atoms in Ce 3+ states within the Ce-oxide layer has been found to decrease from 47% at as-deposited sample to 26% after annealing. From detailed reaction analysis of valence number transitions of Ce atoms and the creation of SiO 2 layer at the interface, the reacted Ce 3+ atoms are converted into silicates and Ce 4+ with a ratio of 2:1. The energy bandgap of Ce-silicate layer has been determined as 7.67 eV and the valence band offset with respect to Si(100) wafer has been extracted as 4.35 eV.

Original languageEnglish
Pages (from-to)1513-1516
Number of pages4
JournalVacuum
Volume86
Issue number10
DOIs
Publication statusPublished - 2012 Apr 27
Externally publishedYes

Keywords

  • Band structure
  • Cerium oxide
  • High-k
  • Silicate
  • Valence number
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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