Valence controls and codoping for low-resistivity n-type diamond by ab initio molecular-dynamics simulation

Takeshi Nishimatsu, Hiroshi Katayama-Yoshida, Nozomi Orita

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Based upon ab initio molecular dynamics simulation, we have proposed a new valence control method, "a codoping method" (doping n- and p-type dopants at the same time), in order to fabricate a low-resistivity n-type diamond. We calculated the stable atomic configuration and electronic structure of the codoping of n- (nitrogen or phosphorus) and p-type (boron) dopants. We found that the codoping of nitrogen and boron is the best candidate to make the low-resistivity n-type diamond. We discuss the universality of codoping method for valence control in wide band gap semiconductors.

Original languageEnglish
Pages (from-to)799-804
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue numberPART 2
DOIs
Publication statusPublished - 1997

Keywords

  • Codoping
  • Low-resistivity diamond
  • ab initio calculation
  • n-type diamond

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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