Valence charges for ultrathin SiO2 films formed on Si(100)

K. Hirose, M. Kihara, H. Okamoto, H. Nohira, E. Ikenaga, Y. Takata, K. Kobayashi, T. Hattori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    7 Citations (Scopus)

    Abstract

    We measure the relative chemical shift between Si Is and Si 2p, ΔE1S - ΔE2S, for 0.20-1.96-nm-thick SiO 2 films formed on Si substrates using high-resolution high-energys x-ray radiation. It is found that ΔE1S - ΔE2S is independent of SiO2 film thickness for films thicker than 1.0 nm, whereas it is smaller for films thinner than 0.5 nm. The result, in conjunction with first principles molecular orbital calculations, indicates that the valence charge of the Si atom is larger for in ultrathin SiO2 films than in the thicker SiO2 films.

    Original languageEnglish
    Title of host publicationProceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
    Pages83-86
    Number of pages4
    DOIs
    Publication statusPublished - 2006 Mar 1
    EventICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France
    Duration: 2005 Jul 32005 Jul 8

    Publication series

    NameJournal De Physique. IV : JP
    Volume132
    ISSN (Print)1155-4339
    ISSN (Electronic)1764-7177

    Other

    OtherICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
    CountryFrance
    CityAix-en-Provence
    Period05/7/305/7/8

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Hirose, K., Kihara, M., Okamoto, H., Nohira, H., Ikenaga, E., Takata, Y., Kobayashi, K., & Hattori, T. (2006). Valence charges for ultrathin SiO2 films formed on Si(100). In Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces (pp. 83-86). (Journal De Physique. IV : JP; Vol. 132). https://doi.org/10.1051/jp4:2006132016