Valence band studies of p- and n-type Ba 8 Ga 16 Ge 30 using high-resolution photoelectron spectroscopy

J. Tang, J. T. Xu, Satoshi Heguri, K. Akai, Katsumi Tanigaki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electronic states of p- and n-type Ba 8 Ga 16 Ge 30 (BGG) are studied by high-resolution x-ray photoelectron spectroscopy. In BGG, three bands are resolved in the valence band region. Theoretical calculations show that the three band structures in the valence band are mainly constructed by the Ge/Ga 4s and 4p wavefunctions with little contribution from Ba 5s, 5p, and 5d. The valence band around the Fermi level region of n-type BGG is sensitive to temperature, while that of p-BGG is stable when the temperature changes. The data indicate that the endohedral Ba in p- and n-type BGG rattle with different modes due to the different hybridization with the orbitals of the framework polyhedra.

Original languageEnglish
Pages (from-to)769-772
Number of pages4
JournalJournal of Electronic Materials
Volume40
Issue number5
DOIs
Publication statusPublished - 2011 May 1

Keywords

  • Clathrate
  • electronic structure
  • x-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Valence band studies of p- and n-type Ba <sub>8</sub> Ga <sub>16</sub> Ge <sub>30</sub> using high-resolution photoelectron spectroscopy'. Together they form a unique fingerprint.

  • Cite this