Abstract
We present excitation and luminescence spectra of (Al, Ga)As quantum wells grown in three different crystal orientations ((001), (310) and (111B)). The features in these spectra are assigned using an eight-band k.p bandstructure calculation and effective-mass type of calculations of the excitonic binding energy, yielding detailed information concerning the GaAs valence-band anisotropy and exciton mixing phenomena.
Original language | English |
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Pages (from-to) | 355-358 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 5 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1989 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering