We present excitation and luminescence spectra of (Al, Ga)As quantum wells grown in three different crystal orientations ((001), (310) and (111B)). The features in these spectra are assigned using an eight-band k.p bandstructure calculation and effective-mass type of calculations of the excitonic binding energy, yielding detailed information concerning the GaAs valence-band anisotropy and exciton mixing phenomena.
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering