Valence band edge of ultra-thin silicon oxide near the interface

H. Nohira, A. Omura, M. Katayama, T. Hattori

    Research output: Contribution to journalArticle

    21 Citations (Scopus)

    Abstract

    The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(100) surface in 1 Torr dry oxygen at 600-880̊C were studied. The following results are obtained: (1) the energy of top of valence band within the critical distance of 0.9 nm from the SiO 2 /Si interface is different from that of bulk silicon oxide by about 0.2 eV, (2) this critical distance for Si(100) and the amount of change in valence band edge near this critical distance are nearly equal to those for Si(111).

    Original languageEnglish
    Pages (from-to)546-549
    Number of pages4
    JournalApplied Surface Science
    Volume123-124
    DOIs
    Publication statusPublished - 1998 Jan

    Keywords

    • SiO
    • SiO /Si(100) interface
    • Transition layer
    • Valence band discontinuity
    • Valence band structure
    • XPS

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

    Fingerprint Dive into the research topics of 'Valence band edge of ultra-thin silicon oxide near the interface'. Together they form a unique fingerprint.

  • Cite this