Abstract
The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600-850 °C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO2/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.
| Original language | English |
|---|---|
| Pages (from-to) | 421-425 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 477 |
| Publication status | Published - 1997 Jan 1 |
| Event | Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA Duration: 1997 Mar 31 → 1997 Apr 2 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials