The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600-850 °C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO2/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.
|Number of pages||5|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1997 Jan 1|
|Event||Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA|
Duration: 1997 Mar 31 → 1997 Apr 2
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials