Valence band discontinuity at and near the SiO2/Si(111) interface

Hiroshi Nohira, Takeo Hattori

    Research output: Contribution to journalConference articlepeer-review

    3 Citations (Scopus)

    Abstract

    The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600-850 °C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO2/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.

    Original languageEnglish
    Pages (from-to)421-425
    Number of pages5
    JournalMaterials Research Society Symposium - Proceedings
    Volume477
    Publication statusPublished - 1997 Jan 1
    EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
    Duration: 1997 Mar 311997 Apr 2

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Fingerprint Dive into the research topics of 'Valence band discontinuity at and near the SiO2/Si(111) interface'. Together they form a unique fingerprint.

    Cite this