Valence band discontinuity at and near the SiO2/Si(111) interface

Hiroshi Nohira; Takeo Hattori

Valence band discontinuity at and near the SiO2/Si(111) interface

Hiroshi Nohira, Takeo Hattori

Research output: Contribution to journal › Conference article › peer-review

Abstract

The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600-850 °C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO₂/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.

Original language	English
Pages (from-to)	421-425
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	477
Publication status	Published - 1997 Jan 1
Event	Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA Duration: 1997 Mar 31 → 1997 Apr 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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title = "Valence band discontinuity at and near the SiO2/Si(111) interface",

abstract = "The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600-850 °C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO2/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.",

author = "Hiroshi Nohira and Takeo Hattori",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "477",

pages = "421--425",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Spring Meeting ; Conference date: 31-03-1997 Through 02-04-1997",

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T1 - Valence band discontinuity at and near the SiO2/Si(111) interface

AU - Nohira, Hiroshi

AU - Hattori, Takeo

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600-850 °C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO2/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.

AB - The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600-850 °C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO2/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.

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M3 - Conference article

AN - SCOPUS:0030700145

VL - 477

SP - 421

EP - 425

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1997 MRS Spring Meeting

Y2 - 31 March 1997 through 2 April 1997

ER -