TY - JOUR
T1 - Valence band barrier at (Ga,Mn)As/GaAs interfaces
AU - Ohno, Y.
AU - Arata, I.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
This work was partly supported by the “Research for the Future” program (No. JSPS-RFTF97P00202) from JSPS and by a Grant-in-Aids from the Ministry of Education, Science, Sports and Culture, Japan (Nos. 09244103 and 12305001).
PY - 2002/3
Y1 - 2002/3
N2 - Transport properties of (Ga,Mn)As/GaAs/p-GaAs p-i-p diodes were studied to manifest the potential barrier in the valence band at (Ga,Mn)As/GaAs junctions. Spin injection into a nonmagnetic semiconductor was demonstrated by probing polarization of light emitted from (Ga,Mn)As/(In,Ga)As/n-GaAs p-i-n junctions. The temperature dependences of the current-voltage characteristics exhibited thermionic emission behaviors which gave the effective potential barrier height of 87-140 meV for holes injected from (GA,Mn)As to undoped GaAs.
AB - Transport properties of (Ga,Mn)As/GaAs/p-GaAs p-i-p diodes were studied to manifest the potential barrier in the valence band at (Ga,Mn)As/GaAs junctions. Spin injection into a nonmagnetic semiconductor was demonstrated by probing polarization of light emitted from (Ga,Mn)As/(In,Ga)As/n-GaAs p-i-n junctions. The temperature dependences of the current-voltage characteristics exhibited thermionic emission behaviors which gave the effective potential barrier height of 87-140 meV for holes injected from (GA,Mn)As to undoped GaAs.
KW - Ferromagnetic semiconductor
KW - Spin injection
KW - Thermionic emission
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U2 - 10.1016/S1386-9477(02)00185-6
DO - 10.1016/S1386-9477(02)00185-6
M3 - Article
AN - SCOPUS:0036493073
VL - 13
SP - 521
EP - 524
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -