Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams

Akira Uedono, Ichiro Yonenaga, Tomohito Watanabe, Shogo Kimura, Nagayasu Oshima, Ryoichi Suzuki, Shoji Ishibashi, Yutaka Ohno

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8 Citations (Scopus)

Abstract

Vacancy-type defects in plastically deformed GaN were studied using monoenergetic positron beams. Dislocations with a Burgers vector of (1/3)[1 2 ̄10] were introduced by applying compressive stress at 950 °C. Measurements of Doppler broadening spectra of the annihilation radiation and positron lifetime spectra showed that both microvoids and Ga-vacancy-type defects were introduced into the deformed sample. The former defects are considered to be introduced through an agglomeration of vacancies introduced by dislocation motions. We observed a distribution of the mean positron lifetime along a long side of the deformed sample, which corresponds to the stress distribution during the deformation. In photoluminescence studies, yellow-band luminescence (2.2 eV) decreased due to the deformation. The suppression of this band was attributed to the vacancy-type defects and/or dislocations introduced by the deformation.

Original languageEnglish
Article number084506
JournalJournal of Applied Physics
Volume114
Issue number8
DOIs
Publication statusPublished - 2013 Aug 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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