TY - GEN
T1 - Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation
AU - Uedono, Akira
AU - Tsutsui, Kazuo
AU - Ishibashi, Shoji
AU - Watanabe, Hiromichi
AU - Kubota, Shoji
AU - Tenjinbayashi, Kazuki
AU - Nakagawa, Yasumasa
AU - Mizuno, Bunji
AU - Hattori, Takeo
AU - Iwai, Hiroshi
PY - 2010
Y1 - 2010
N2 - Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. A positron annihilates with an electron and emits two 511 keV γ-quanta. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the first-principles calculations. For the as-doped sample, the vacancy-rich region was found to be localized within 0-10 nm from the surface, and the major defect species were determined to be divacancy-B complexes. After spike rapid thermal annealing at 1075°C, those complexes were annealed out, and turned to B clusters such as icosahedral B12 distributed between 4 nm and 32 nm from the surface. We will demonstrate that that the positron annihilation technique is sensitive to point defects in shallow junctions formed on Si substrates without influence of B atoms located in the substitutional site.
AB - Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. A positron annihilates with an electron and emits two 511 keV γ-quanta. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the first-principles calculations. For the as-doped sample, the vacancy-rich region was found to be localized within 0-10 nm from the surface, and the major defect species were determined to be divacancy-B complexes. After spike rapid thermal annealing at 1075°C, those complexes were annealed out, and turned to B clusters such as icosahedral B12 distributed between 4 nm and 32 nm from the surface. We will demonstrate that that the positron annihilation technique is sensitive to point defects in shallow junctions formed on Si substrates without influence of B atoms located in the substitutional site.
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U2 - 10.1109/IWJT.2010.5474912
DO - 10.1109/IWJT.2010.5474912
M3 - Conference contribution
AN - SCOPUS:77954262713
SN - 9781424458691
T3 - IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology
SP - 149
EP - 154
BT - IWJT-2010
T2 - 10th International Workshop on Junction Technology, IWJT-2010
Y2 - 10 May 2010 through 11 May 2010
ER -