Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation

Akira Uedono, Kazuo Tsutsui, Shoji Ishibashi, Hiromichi Watanabe, Shoji Kubota, Kazuki Tenjinbayashi, Yasumasa Nakagawa, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. A positron annihilates with an electron and emits two 511 keV γ-quanta. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the first-principles calculations. For the as-doped sample, the vacancy-rich region was found to be localized within 0-10 nm from the surface, and the major defect species were determined to be divacancy-B complexes. After spike rapid thermal annealing at 1075°C, those complexes were annealed out, and turned to B clusters such as icosahedral B12 distributed between 4 nm and 32 nm from the surface. We will demonstrate that that the positron annihilation technique is sensitive to point defects in shallow junctions formed on Si substrates without influence of B atoms located in the substitutional site.

Original languageEnglish
Title of host publicationIWJT-2010
Subtitle of host publicationExtended Abstracts - 2010 International Workshop on Junction Technology
Pages149-154
Number of pages6
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event10th International Workshop on Junction Technology, IWJT-2010 - Shanghai, China
Duration: 2010 May 102010 May 11

Publication series

NameIWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology

Other

Other10th International Workshop on Junction Technology, IWJT-2010
CountryChina
CityShanghai
Period10/5/1010/5/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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