High-quality InN layers grown on sapphire substrates by plasma-assisted molecular-beam epitaxy were characterized using monoenergetic positron beams. The carrier concentrations of the films were controlled by Si doping (2.1 × 10 18 to 1.4 × 10 19 cm -3), and the highest obtained Hall mobility was 1300 cm 2 V -1 s -1. The Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons were measured as a function of the incident positron energy for undoped and Si-doped InN films. The line-shape parameter S increased with increasing carrier concentration, suggesting the introduction of vacancy-type defects by a Fermi-level effect. The major defect species were varied with carrier concentration, and its species were identified as In vacancies (V In) or their related defects.
|Journal||Journal of Applied Physics|
|Publication status||Published - 2005 Feb 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)