Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

A. Uedono, S. F. Chichibu, M. Higashiwaki, T. Matsui, T. Ohdaira, R. Suzuki

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16 Citations (Scopus)

Abstract

High-quality InN layers grown on sapphire substrates by plasma-assisted molecular-beam epitaxy were characterized using monoenergetic positron beams. The carrier concentrations of the films were controlled by Si doping (2.1 × 10 18 to 1.4 × 10 19 cm -3), and the highest obtained Hall mobility was 1300 cm 2 V -1 s -1. The Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons were measured as a function of the incident positron energy for undoped and Si-doped InN films. The line-shape parameter S increased with increasing carrier concentration, suggesting the introduction of vacancy-type defects by a Fermi-level effect. The major defect species were varied with carrier concentration, and its species were identified as In vacancies (V In) or their related defects.

Original languageEnglish
Article number043514
JournalJournal of Applied Physics
Volume97
Issue number4
DOIs
Publication statusPublished - 2005 Feb 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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