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Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams
A. Uedono, R. Hasunuma, K. Shiraishi, K. Yamabe, S. Inumiya, Y. Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, S. Ishibashi, T. Ohdaira, R. Suzuki, K. Yamada
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution