Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams

A. Uedono, R. Hasunuma, K. Shiraishi, K. Yamabe, S. Inumiya, Y. Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, S. Ishibashi, T. Ohdaira, R. Suzuki, K. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Vacancy-type defects in MOSFET structures fabricated with high-k (HfSiON) gate dielectrics were studied by monogenetic positron beams An expansion of open volumes in HfSiON fabricated on Si substrates using atomic layer deposition technique was observed with increasing nitrogen concentration This fact was discussed in terms of a role of nitrogen in Hf-related oxide using results obtained by first-principles calculation and XPS. MOSFETs fabricated by F +-channel implantation technique were also characterized. The major defect species which causes the F& shift of MOSFETs was identified as vacancy-fluorine complexes (such as V3F2) locate in channel regions of Si substrates. The preset work suggests that positron annihilation can be used to detect microscopic defects in MOSFETs, and it is a useful tool for determining process parameters for MOSFET fabrications with high-k gate dielectrics.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages81-90
Number of pages10
Edition4
DOIs
Publication statusPublished - 2007 Dec 1
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 82007 Oct 10

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams'. Together they form a unique fingerprint.

Cite this