Vacancy-migration-mediated disordering in cupt-ordered (ga,in)p studied by in situ optical spectroscopy in a transmission electron microscope

Y. Ohno, Y. Kawai, S. Takeda

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10 Citations (Scopus)

Abstract

We examined electron-irradiation-induced disordering in CuPt-ordered (Ga,In)P by in situ photoluminescence and cathodoluminescence spectroscopy in a transmission electron microscope. A decrease of luminescence intensity following an electron irradiation in the energy range above 120 keV has been observed. We have shown that the decrease is due to the Frenkel-type defects on the Ga and In sublattices generated by electron irradiation, and the threshold electron energies for the displacement of Ga and In atoms have been estimated to be 145 and 120 keV, respectively. We propose that (1) electron-irradiation-induced migration of group-III (Ga and In) vacancies dominates the disordering in the dose range below (Formula presented) and (2) spontaneous recombination of group-III vacancies and interstitials dominates the disordering in the dose range above (Formula presented)

Original languageEnglish
Pages (from-to)2694-2699
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number4
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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