Abstract
To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and H2 followed by the quenching into water. Contrary to our expectation, the vacancy concentration was higher than that of the thermal equilibrium during the short duration of oxidation.
Original language | English |
---|---|
Article number | 101904 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2008 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)