Vacancy formation during oxidation of silicon crystal surface

M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami, I. Yonenaga

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and H2 followed by the quenching into water. Contrary to our expectation, the vacancy concentration was higher than that of the thermal equilibrium during the short duration of oxidation.

Original languageEnglish
Article number101904
JournalApplied Physics Letters
Volume93
Issue number10
DOIs
Publication statusPublished - 2008 Sep 19

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Vacancy formation during oxidation of silicon crystal surface'. Together they form a unique fingerprint.

  • Cite this

    Suezawa, M., Yamamoto, Y., Suemitsu, M., Usami, N., & Yonenaga, I. (2008). Vacancy formation during oxidation of silicon crystal surface. Applied Physics Letters, 93(10), [101904]. https://doi.org/10.1063/1.2979708