Vacancy formation during oxidation of silicon crystal surface

M. Suezawa; Y. Yamamoto; M. Suemitsu; N. Usami; I. Yonenaga

doi:10.1063/1.2979708

Vacancy formation during oxidation of silicon crystal surface

M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami, I. Yonenaga

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and H₂ followed by the quenching into water. Contrary to our expectation, the vacancy concentration was higher than that of the thermal equilibrium during the short duration of oxidation.

Original language	English
Article number	101904
Journal	Applied Physics Letters
Volume	93
Issue number	10
DOIs	https://doi.org/10.1063/1.2979708
Publication status	Published - 2008 Sep 19

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Suezawa, M., Yamamoto, Y., Suemitsu, M., Usami, N., & Yonenaga, I. (2008). Vacancy formation during oxidation of silicon crystal surface. Applied Physics Letters, 93(10), [101904]. https://doi.org/10.1063/1.2979708

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