Vacancy formation during oxidation of silicon crystal surface

M. Suezawa; Y. Yamamoto; M. Suemitsu; N. Usami; I. Yonenaga

doi:10.1063/1.2979708

Vacancy formation during oxidation of silicon crystal surface

M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami, I. Yonenaga

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3 Citations (Scopus)

Abstract

To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and H₂ followed by the quenching into water. Contrary to our expectation, the vacancy concentration was higher than that of the thermal equilibrium during the short duration of oxidation.

Original language	English
Article number	101904
Journal	Applied Physics Letters
Volume	93
Issue number	10
DOIs	https://doi.org/10.1063/1.2979708
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2979708

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@article{1ce1c09c0bcf44d6808a4ce213491bab,

title = "Vacancy formation during oxidation of silicon crystal surface",

abstract = "To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and H2 followed by the quenching into water. Contrary to our expectation, the vacancy concentration was higher than that of the thermal equilibrium during the short duration of oxidation.",

author = "M. Suezawa and Y. Yamamoto and M. Suemitsu and N. Usami and I. Yonenaga",

year = "2008",

doi = "10.1063/1.2979708",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Vacancy formation during oxidation of silicon crystal surface

AU - Suezawa, M.

AU - Yamamoto, Y.

AU - Suemitsu, M.

AU - Usami, N.

AU - Yonenaga, I.

PY - 2008

Y1 - 2008

N2 - To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and H2 followed by the quenching into water. Contrary to our expectation, the vacancy concentration was higher than that of the thermal equilibrium during the short duration of oxidation.

AB - To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and H2 followed by the quenching into water. Contrary to our expectation, the vacancy concentration was higher than that of the thermal equilibrium during the short duration of oxidation.

UR - http://www.scopus.com/inward/record.url?scp=51749105016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51749105016&partnerID=8YFLogxK

U2 - 10.1063/1.2979708

DO - 10.1063/1.2979708

M3 - Article

AN - SCOPUS:51749105016

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 101904

ER -

Vacancy formation during oxidation of silicon crystal surface

Abstract

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