Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam

Akira Uedono, Kazuo Tsutsui, Shoji Ishibashi, Hiromichi Watanabe, Shoji Kubota, Yasumasa Nakagawa, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai

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    11 Citations (Scopus)

    Abstract

    Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the projector augmented-wave method. For the as-doped sample, the vacancy-rich region was found to be localized at a depth of 0-10 nm, and the major defect species were determined to be divacancy- B complexes. After spike rapid thermal annealing at 1075 °C, the lineshape parameter S of Doppler broadening spectra corresponding to the high- B-concentration region (4-30 nm) was found to be smaller than the characteristic S value obtained for defect-free Si. From a detailed analysis of the Doppler broadening spectra, the origin of the decrease in the S value was attributed to the trapping of positrons by negatively charged B clusters such as icosahedral B12.

    Original languageEnglish
    Pages (from-to)513011-513016
    Number of pages6
    JournalJapanese journal of applied physics
    Volume49
    Issue number5 PART 1
    DOIs
    Publication statusPublished - 2010 May 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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    Uedono, A., Tsutsui, K., Ishibashi, S., Watanabe, H., Kubota, S., Nakagawa, Y., Mizuno, B., Hattori, T., & Iwai, H. (2010). Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam. Japanese journal of applied physics, 49(5 PART 1), 513011-513016. https://doi.org/10.1143/JJAP.49.051301