Vacancy-assisted halogen reactions on Si(100)- (2×1)

Koji Nakayama, C. M. Aldao, J. H. Weaver

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Scanning tunneling microscopy studies of etching of Si(100)−(2×1) show that the rate of terrace pit formation goes through a maximum for surface coverages of θ(Cl)=0.77±0.05monolayer, in contrast to predictions of conventional models. Using recently calculated energies for different possible surface configurations, we show that a key component in desorption is the formation of a single-atom vacancy adjacent to a volatile SiCl2 unit. The demonstration of vacancy-assisted reaction establishes a self-limited reaction and the sequence of events leading to desorption.

Original languageEnglish
Pages (from-to)568-571
Number of pages4
JournalPhysical Review Letters
Volume82
Issue number3
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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