Vacancies in defect-free zone of point-defect-controlled CZ silicon observed by low-temperature ultrasonic measurements

Hiroshi Yamada-Kaneta, Terutaka Goto, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The low-temperature ultrasonic measurements are performed for the direct observation of the vacancies in Czochralski-grown (CZ-grown) silicon crystal. The elastic softening similar to that we recently found for the floating-zone-grown (FZ-grown) silicon crystals is observed also for the vacancy-rich region of the defect-free zone (DFZ) in the CZ silicon crystal. We further uncover that both of the interstitial-rich region in the DFZ and the region of the ring-like oxidation-induced stacking faults of the same crystal ingot exhibit no such elastic softening of detectable magnitude, confirming our previous conclusion that the defects responsible for the low-temperature softening are the vacancies. We observe how the vacancy concentration in the DFZ varies along the pulling direction.

Original languageEnglish
Pages (from-to)240-243
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume134
Issue number2-3 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Oct 15

Keywords

  • Low-temperature
  • Silicon
  • Softening
  • Ultrasonic
  • Vacancy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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