V defects of ZnO thin films grown on Si as an ultraviolet optical path

Y. Z. Yoo, T. Sekiguchi, Toyohiro Chikyo, M. Kawasaki, T. Onuma, Shigefusa Chichibu, J. H. Song, H. Koinuma

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Abstract

The ZnO films epitaxially grown on the ZnS-buffered Si were investigated to observe V defects. The structural and optical properties of the films were studied using x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), cathodoluminescence (CL), and optical reflectance (OR). It was observed that V-shaped defects with approximately 30 nm depth act as the optical paths. The results show that the near-bandedge emission at 3.22 and 3.32 eV at 30 K was transmitted throughout exciton dead layer without significant absorption.

Original languageEnglish
Pages (from-to)502-504
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number4
DOIs
Publication statusPublished - 2004 Jan 26
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Yoo, Y. Z., Sekiguchi, T., Chikyo, T., Kawasaki, M., Onuma, T., Chichibu, S., Song, J. H., & Koinuma, H. (2004). V defects of ZnO thin films grown on Si as an ultraviolet optical path. Applied Physics Letters, 84(4), 502-504. https://doi.org/10.1063/1.1643535