UV/VIS/NIR imaging technologies: Challenges and opportunities

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Challenges and opportunities of ultraviolet (UV), visible (VIS) and near-infrared (NIR) light imaging technologies are overviewed in this paper. For light detectors and image sensors for UV/VIS/NIR imaging, it is required that they have high sensitivity for wide spectral light waveband or targeted narrow waveband as well as the high stability of light sensitivity toward UV light based on cost effective technology. Wide spectral response, high sensitivity and high stability advanced Si photodiode (PD) pn junction formation technology based on the flattened Si surface and high transmittance on-chip optical filter formation technology were developed. A linear photodiode array (PDA), wide dynamic range and ultrahigh speed CMOS image sensors employing the developed technology were fabricated and their.

Original languageEnglish
Title of host publicationImage Sensing Technologies
Subtitle of host publicationMaterials, Devices, Systems, and Applications II
EditorsAchyut K. Dutta, Nibir K. Dhar
PublisherSPIE
ISBN (Electronic)9781628415971
DOIs
Publication statusPublished - 2015 Jan 1
EventImage Sensing Technologies: Materials, Devices, Systems, and Applications II - Baltimore, United States
Duration: 2015 Apr 222015 Apr 23

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9481
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherImage Sensing Technologies: Materials, Devices, Systems, and Applications II
CountryUnited States
CityBaltimore
Period15/4/2215/4/23

Keywords

  • Image sensor
  • Si
  • Ultraviolet light
  • Visible light near-infrared light

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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