@inproceedings{2e99f21c1efa47069c859ad60e7810cd,
title = "UV/VIS/NIR imaging technologies: Challenges and opportunities",
abstract = "Challenges and opportunities of ultraviolet (UV), visible (VIS) and near-infrared (NIR) light imaging technologies are overviewed in this paper. For light detectors and image sensors for UV/VIS/NIR imaging, it is required that they have high sensitivity for wide spectral light waveband or targeted narrow waveband as well as the high stability of light sensitivity toward UV light based on cost effective technology. Wide spectral response, high sensitivity and high stability advanced Si photodiode (PD) pn junction formation technology based on the flattened Si surface and high transmittance on-chip optical filter formation technology were developed. A linear photodiode array (PDA), wide dynamic range and ultrahigh speed CMOS image sensors employing the developed technology were fabricated and their.",
keywords = "Image sensor, Si, Ultraviolet light, Visible light near-infrared light",
author = "Rihito Kuroda and Shigetoshi Sugawa",
year = "2015",
month = jan,
day = "1",
doi = "10.1117/12.2180060",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Dutta, {Achyut K.} and Dhar, {Nibir K.}",
booktitle = "Image Sensing Technologies",
note = "Image Sensing Technologies: Materials, Devices, Systems, and Applications II ; Conference date: 22-04-2015 Through 23-04-2015",
}