@inproceedings{0c111a1bbfe34d0293670d1aac72e8f4,
title = "UV-Raman spectroscopy study on SiO2/Si interface",
abstract = "We evaluated oxidation-induced stresses in Si crystal and qualities of Si crystal near the SiO2/Si interfaces formed in dry O2 and O radicals using UV-Raman spectroscopy with a 364 nm excitation laser. The compressive stresses were observed in Si near the SiCVSi interfaces formed in dry O2 and O radicals. The stresses induced by the oxidation at 1050°C were higher than those at 900°C and 1000°C. It was also shown that the stress in Si crystal and the quality of Si crystal near the SiO 2/Si interface formed in dry O2 depended on the degree of oxygen dilution and the oxidation time. The SiO2/Si interface formed in O radicals exhibited larger compressive stress and better crystal quality as compared with that formed in dry O2.",
author = "M. Hattori and T. Yoshida and D. Kosemura and A. Ogura and T. Suwa and Akinobu Teramoto and Takeo Hattori and T. Ohmi",
year = "2009",
doi = "10.1149/1.3122085",
language = "English",
isbn = "9781566777100",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "55--66",
booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10",
edition = "2",
note = "International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",
}