UV-Raman spectroscopy study on SiO2/Si interface

M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, Akinobu Teramoto, Takeo Hattori, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We evaluated oxidation-induced stresses in Si crystal and qualities of Si crystal near the SiO2/Si interfaces formed in dry O2 and O radicals using UV-Raman spectroscopy with a 364 nm excitation laser. The compressive stresses were observed in Si near the SiCVSi interfaces formed in dry O2 and O radicals. The stresses induced by the oxidation at 1050°C were higher than those at 900°C and 1000°C. It was also shown that the stress in Si crystal and the quality of Si crystal near the SiO 2/Si interface formed in dry O2 depended on the degree of oxygen dilution and the oxidation time. The SiO2/Si interface formed in O radicals exhibited larger compressive stress and better crystal quality as compared with that formed in dry O2.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
PublisherElectrochemical Society Inc.
Pages55-66
Number of pages12
Edition2
ISBN (Electronic)9781607680604
ISBN (Print)9781566777100
DOIs
Publication statusPublished - 2009
EventInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: 2009 May 242009 May 29

Publication series

NameECS Transactions
Number2
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CitySan Francisco, CA
Period09/5/2409/5/29

ASJC Scopus subject areas

  • Engineering(all)

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