UV-assisted deposition of TEOS SiO2 films using the spin-coating method

Koji Kinashi, Michio Niwano, Nobuo Miyamoto, Koji Honma

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We have previously proposed a method of depositing silicon dioxide films on Si from tetraethoxysilane Si(OC2H5)4 (TEOS) using ultraviolet (UV) light from a low-pressure mercury lamp. In the method, an organic solution which contains TEOS is spin-coated onto a Si wafer surface to form a thin organic film which is then exposed to UV light to synthesize silicon dioxide. In this study, the photochemical reactions in the oxide formation process have been investigated using infrared (IR) and UV absorption spectroscopy. The IR and UV absorption data confirm that the UV light decomposes the organic compounds in the spin-coated organic film to convert the film into a silicon dioxide film. We also demonstrate with thermal desorption spectroscopy (TDS) measurements that the deposited film is stable with respect to substrate heating to approximately 400°C.

Original languageEnglish
Pages (from-to)332-337
Number of pages6
JournalApplied Surface Science
Issue numberC
Publication statusPublished - 1994 May 2
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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