TY - JOUR
T1 - UV-assisted deposition of TEOS SiO2 films using the spin-coating method
AU - Kinashi, Koji
AU - Niwano, Michio
AU - Miyamoto, Nobuo
AU - Honma, Koji
N1 - Funding Information:
The authors wish to thank Dr. M. Yanagihara and A. Arai for their assistance in the UV absorption measurements. Part of this work was supported by a Grant-in-Aid for General Project Research from the Ministry of Education, Science and Culture of Japan.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1994/5/2
Y1 - 1994/5/2
N2 - We have previously proposed a method of depositing silicon dioxide films on Si from tetraethoxysilane Si(OC2H5)4 (TEOS) using ultraviolet (UV) light from a low-pressure mercury lamp. In the method, an organic solution which contains TEOS is spin-coated onto a Si wafer surface to form a thin organic film which is then exposed to UV light to synthesize silicon dioxide. In this study, the photochemical reactions in the oxide formation process have been investigated using infrared (IR) and UV absorption spectroscopy. The IR and UV absorption data confirm that the UV light decomposes the organic compounds in the spin-coated organic film to convert the film into a silicon dioxide film. We also demonstrate with thermal desorption spectroscopy (TDS) measurements that the deposited film is stable with respect to substrate heating to approximately 400°C.
AB - We have previously proposed a method of depositing silicon dioxide films on Si from tetraethoxysilane Si(OC2H5)4 (TEOS) using ultraviolet (UV) light from a low-pressure mercury lamp. In the method, an organic solution which contains TEOS is spin-coated onto a Si wafer surface to form a thin organic film which is then exposed to UV light to synthesize silicon dioxide. In this study, the photochemical reactions in the oxide formation process have been investigated using infrared (IR) and UV absorption spectroscopy. The IR and UV absorption data confirm that the UV light decomposes the organic compounds in the spin-coated organic film to convert the film into a silicon dioxide film. We also demonstrate with thermal desorption spectroscopy (TDS) measurements that the deposited film is stable with respect to substrate heating to approximately 400°C.
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U2 - 10.1016/0169-4332(94)90432-4
DO - 10.1016/0169-4332(94)90432-4
M3 - Article
AN - SCOPUS:0028760995
VL - 79-80
SP - 332
EP - 337
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - C
ER -