Utilization of Si atomic steps for Cu nanowire fabrication

Ryu Hasunuma; Takanobu Yada; Junichi Okamoto; Daisuke Hojo; Norio Tokuda; Kikuo Yamabe

doi:10.1016/j.stam.2005.05.005

Utilization of Si atomic steps for Cu nanowire fabrication

Ryu Hasunuma, Takanobu Yada, Junichi Okamoto, Daisuke Hojo, Norio Tokuda, Kikuo Yamabe

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Techniques for controlling atomic step position at low-temperature and selective growth of Cu nanowires along the atomic step edges have been studied. By immersing the Si(111) substrates with well-defined step/terrace surfaces in the Cu-contained water with the dissolved oxygen content of less than 1 ppb, selective growth of Cu nanowires along the step edges was successfully achieved. Total reflection X-ray fluorescence spectroscopy (TXRF) revealed that the fabricated nanowires were composed of mono-atomic Cu rows. For step position control, the characteristics of step-flow pinning effect of SiO₂ films were investigated. Fine SiO₂ line patterns drawn by anodic oxidation using AFM probes enable us to obtain the step-free Si areas predetermined by the patterns.

Original language	English
Pages (from-to)	667-670
Number of pages	4
Journal	Science and Technology of Advanced Materials
Volume	6
Issue number	6
DOIs	https://doi.org/10.1016/j.stam.2005.05.005
Publication status	Published - 2005 Sep

Keywords

AFM
Anodic oxidation step
Cu
Nanowire

ASJC Scopus subject areas

Materials Science(all)

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10.1016/j.stam.2005.05.005

Cite this

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title = "Utilization of Si atomic steps for Cu nanowire fabrication",

abstract = "Techniques for controlling atomic step position at low-temperature and selective growth of Cu nanowires along the atomic step edges have been studied. By immersing the Si(111) substrates with well-defined step/terrace surfaces in the Cu-contained water with the dissolved oxygen content of less than 1 ppb, selective growth of Cu nanowires along the step edges was successfully achieved. Total reflection X-ray fluorescence spectroscopy (TXRF) revealed that the fabricated nanowires were composed of mono-atomic Cu rows. For step position control, the characteristics of step-flow pinning effect of SiO2 films were investigated. Fine SiO2 line patterns drawn by anodic oxidation using AFM probes enable us to obtain the step-free Si areas predetermined by the patterns.",

keywords = "AFM, Anodic oxidation step, Cu, Nanowire",

author = "Ryu Hasunuma and Takanobu Yada and Junichi Okamoto and Daisuke Hojo and Norio Tokuda and Kikuo Yamabe",

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T1 - Utilization of Si atomic steps for Cu nanowire fabrication

AU - Hasunuma, Ryu

AU - Yada, Takanobu

AU - Okamoto, Junichi

AU - Hojo, Daisuke

AU - Tokuda, Norio

AU - Yamabe, Kikuo

PY - 2005/9

Y1 - 2005/9

N2 - Techniques for controlling atomic step position at low-temperature and selective growth of Cu nanowires along the atomic step edges have been studied. By immersing the Si(111) substrates with well-defined step/terrace surfaces in the Cu-contained water with the dissolved oxygen content of less than 1 ppb, selective growth of Cu nanowires along the step edges was successfully achieved. Total reflection X-ray fluorescence spectroscopy (TXRF) revealed that the fabricated nanowires were composed of mono-atomic Cu rows. For step position control, the characteristics of step-flow pinning effect of SiO2 films were investigated. Fine SiO2 line patterns drawn by anodic oxidation using AFM probes enable us to obtain the step-free Si areas predetermined by the patterns.

AB - Techniques for controlling atomic step position at low-temperature and selective growth of Cu nanowires along the atomic step edges have been studied. By immersing the Si(111) substrates with well-defined step/terrace surfaces in the Cu-contained water with the dissolved oxygen content of less than 1 ppb, selective growth of Cu nanowires along the step edges was successfully achieved. Total reflection X-ray fluorescence spectroscopy (TXRF) revealed that the fabricated nanowires were composed of mono-atomic Cu rows. For step position control, the characteristics of step-flow pinning effect of SiO2 films were investigated. Fine SiO2 line patterns drawn by anodic oxidation using AFM probes enable us to obtain the step-free Si areas predetermined by the patterns.

KW - AFM

KW - Anodic oxidation step

KW - Cu

KW - Nanowire

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Utilization of Si atomic steps for Cu nanowire fabrication

Abstract

Keywords

ASJC Scopus subject areas

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