Utilization of Si atomic steps for Cu nanowire fabrication

Ryu Hasunuma, Takanobu Yada, Junichi Okamoto, Daisuke Hojo, Norio Tokuda, Kikuo Yamabe

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Techniques for controlling atomic step position at low-temperature and selective growth of Cu nanowires along the atomic step edges have been studied. By immersing the Si(111) substrates with well-defined step/terrace surfaces in the Cu-contained water with the dissolved oxygen content of less than 1 ppb, selective growth of Cu nanowires along the step edges was successfully achieved. Total reflection X-ray fluorescence spectroscopy (TXRF) revealed that the fabricated nanowires were composed of mono-atomic Cu rows. For step position control, the characteristics of step-flow pinning effect of SiO2 films were investigated. Fine SiO2 line patterns drawn by anodic oxidation using AFM probes enable us to obtain the step-free Si areas predetermined by the patterns.

Original languageEnglish
Pages (from-to)667-670
Number of pages4
JournalScience and Technology of Advanced Materials
Issue number6
Publication statusPublished - 2005 Sep


  • AFM
  • Anodic oxidation step
  • Cu
  • Nanowire

ASJC Scopus subject areas

  • Materials Science(all)


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