Abstract
We are currently developing a monolithic electron field emission device and integrated electron optic components for multi-electron beam lithography microsystems basing on a SOI (Silicon On Insulator) wafer. In the Transducer'03 conference, we have reported the concept, simulation, fabrication, emission and focusing characteristics of the device with Pt, Mo emitters. In this paper, we propose an advanced structure with the integration of the focusing, beam correction (stigmator) electrodes and metallic ring array for detection of secondary electrons emitted from the wafer. Initial results of utilizing boron doped diamond and carbon nanotubes (CNTs) emitters are presented. Both diamond and the CNTs were selectively grown using a hot-filament chemical vapor deposition (HF-CVD) technique. Results of field emission improvement of the bundle CNTs on a Si tip array by hydrogen (H 2) treatment are demonstrated. The improvements of the emission current and the long-term stability were attributed to the reduction of the CNTs work function by the formation of C-H bonds.
| Original language | English |
|---|---|
| Pages (from-to) | 430-433 |
| Number of pages | 4 |
| Journal | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) |
| Publication status | Published - 2004 Jul 19 |
| Event | 17th IEEE International Conference on Micro Electro Mechanical Systems (MEMS): Maastricht MEMS 2004 Technical Digest - Maastricht, Netherlands Duration: 2004 Jan 25 → 2004 Jan 29 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanical Engineering
- Electrical and Electronic Engineering