UTC-PD-integrated HEMT for optical-to-sub-terahertz carrier frequency down-conversion

A. Satou, K. Nishimura, Y. Omori, T. Hosotani, K. Iwatsuki, T. Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We developed a novel InGaAs-channel high-electron-mobility transistor (HEMT) integrated with a uni-traveling-carrier photodiode (UTC-PD) structure for the optical-to-wireless carrier frequency down-conversion. We experimentally demonstrated that the output intensity of the down-converted signal is significantly enhanced by 34 dB compared with a standard HEMT, owning to the integration of the UTC-PD structure. We also verified the feasibility of the UTC-PD-integrated HEMT for practical use in the future full coherent network systems.

Original languageEnglish
Title of host publicationNext-Generation Spectroscopic Technologies XIII
EditorsLuisa T. M. Profeta, Abul K. Azad, Steven M. Barnett
PublisherSPIE
ISBN (Electronic)9781510635579
DOIs
Publication statusPublished - 2020
EventNext-Generation Spectroscopic Technologies XIII 2020 - None, United States
Duration: 2020 Apr 272020 May 8

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11390
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNext-Generation Spectroscopic Technologies XIII 2020
CountryUnited States
CityNone
Period20/4/2720/5/8

Keywords

  • Full coherent network
  • InGaAs-HEMT
  • Photonic double-mixing
  • UTC-PD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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