TY - GEN
T1 - UTC-PD-integrated HEMT for optical-to-millimeter-wave carrier frequency down-conversion
AU - Omori, Y.
AU - Hosotani, T.
AU - Otsuji, T.
AU - Iwatsuki, K.
AU - Satou, A.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - We newly developed an InGaAs-channel high-electron-mobility transistor (HEMT) integrated with a uni-traveling-carrier photodiode (UTC-PD) structure as a carrier frequency down-converter from optical data signals to wireless data signals, which utilizes the photonic double-mixing functionality. It was demonstrated that the output intensity of the down-converted millimeter-wave signal is significantly enhanced by 34 dB compared with a standard HEMT, owning to the integration of the UTC-PD structure. We also verify the feasibility of the UTC-PD-integrated HEMT for practical use in the future full coherent networks.
AB - We newly developed an InGaAs-channel high-electron-mobility transistor (HEMT) integrated with a uni-traveling-carrier photodiode (UTC-PD) structure as a carrier frequency down-converter from optical data signals to wireless data signals, which utilizes the photonic double-mixing functionality. It was demonstrated that the output intensity of the down-converted millimeter-wave signal is significantly enhanced by 34 dB compared with a standard HEMT, owning to the integration of the UTC-PD structure. We also verify the feasibility of the UTC-PD-integrated HEMT for practical use in the future full coherent networks.
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M3 - Conference contribution
AN - SCOPUS:85085574254
SN - 9781943580538
T3 - Optics InfoBase Conference Papers
BT - Optical Fiber Communication Conference, OFC 2019
PB - OSA - The Optical Society
T2 - Optical Fiber Communication Conference, OFC 2019
Y2 - 3 March 2019 through 7 March 2019
ER -