UTC-PD-integrated HEMT for optical-to-millimeter-wave carrier frequency down-conversion

Y. Omori, T. Hosotani, T. Otsuji, K. Iwatsuki, A. Satou

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We newly developed an InGaAs-channel high-electron-mobility transistor (HEMT) integrated with a uni-traveling-carrier photodiode (UTC-PD) structure as a carrier frequency down-converter from optical data signals to wireless data signals, which utilizes the photonic double-mixing functionality. It was demonstrated that the output intensity of the down-converted millimeter-wave signal is significantly enhanced by 34 dB compared with a standard HEMT, owning to the integration of the UTC-PD structure. We also verify the feasibility of the UTC-PD-integrated HEMT for practical use in the future full coherent networks.

Original languageEnglish
Title of host publicationOptical Fiber Communication Conference, OFC 2019
PublisherOSA - The Optical Society
ISBN (Print)9781943580538
Publication statusPublished - 2019
EventOptical Fiber Communication Conference, OFC 2019 - San Diego, United States
Duration: 2019 Mar 32019 Mar 7

Publication series

NameOptics InfoBase Conference Papers
VolumePart F160-OFC 2019


ConferenceOptical Fiber Communication Conference, OFC 2019
Country/TerritoryUnited States
CitySan Diego

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials


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