UTC-PD-Integrated HEMT for Optical-to-Millimeter-Wave Carrier Frequency Down-Conversion

Y. Omori, T. Hosotani, T. Otsuji, K. Iwatsuki, A. Satou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We newly developed an InGaAs-channel high-electron-mobility transistor (HEMT) integrated with a uni-traveling-carrier photodiode (UTC-PD) structure as a carrier frequency down-converter from optical data signals to wireless data signals, which utilizes the photonic double-mixing functionality. It was demonstrated that the output intensity of the down-converted millimeter-wave signal is significantly enhanced by 34 dB compared with a standard HEMT, owning to the integration of the UTC-PD structure. We also verify the feasibility of the UTC-PD-integrated HEMT for practical use in the future full coherent networks.

Original languageEnglish
Title of host publication2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580538
DOIs
Publication statusPublished - 2019 Apr 22
Event2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - San Diego, United States
Duration: 2019 Mar 32019 Mar 7

Publication series

Name2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings

Conference

Conference2019 Optical Fiber Communications Conference and Exhibition, OFC 2019
Country/TerritoryUnited States
CitySan Diego
Period19/3/319/3/7

ASJC Scopus subject areas

  • Signal Processing
  • Computer Networks and Communications
  • Atomic and Molecular Physics, and Optics

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