Use of tetraethylgermane in arf excimer laser chemical vapor deposition of amorphous silicon-germanium films

Fujio Ishihara, Hiroshi Uji, Tatsuya Kamimura, Satoru Matsumoto, Hirofumi Higuchi, Shigefusa Chichibu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A new organogermanium precursor, tetraethylgermane (TEGe, Ge(C2H5)4) was used with disilane in ArF excimer laser chemical vapor deposition of hydrogenated amorphous silicon-germanium films (a-Si1-xGex:H, C). The germanium composition, x, could easily be controlled since it almost coincided with the gas-phase composition. The optical band gap (Eopt) of the film was reduced from 1.8 eV (x=0) to 1.4 eV (x=0.8). This relatively wide Eopt compared with conventional hydrogenated or fluorinated silicon-germanium, was ascribed to the carbon corporation and dominant SiH2 and GeH2 bonds in the film.

Original languageEnglish
Pages (from-to)2229-2234
Number of pages6
JournalJapanese journal of applied physics
Volume34
Issue number5R
DOIs
Publication statusPublished - 1995 May
Externally publishedYes

Keywords

  • A-SiGe:H.C
  • ArF excimer laser
  • Narrow-gap material
  • Photo-CVD
  • Tetraethylgermane

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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