Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 thin films by selenization of metal precursors

T. Yamamoto, M. Nakamura, J. Ishizuki, T. Deguchi, S. Ando, H. Nakanishi, Sf Chichibu

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A less-hazardous and low cost selenization method for the preparation of CuInSe2 films was demonstrated using diethylselenide [(C 2H5)2Se:DESe] as a Se source alternative to H2Se. By using N2 as a carrier gas, potential H 2 leakage risk was removed from our previous work [J. Cryst. Growth 243 (2002) 404]. The structural and optical properties of CuInSe2 films fabricated by this method were found to be almost equal to those of the films prepared by the selenization process using DESe/H2 system.

Original languageEnglish
Pages (from-to)1855-1858
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume64
Issue number9-10
DOIs
Publication statusPublished - 2003 Sep
Externally publishedYes

Keywords

  • A. Semiconductors
  • B. Crystal growth
  • C. X-ray diffraction
  • D. Luminescence
  • D. Optical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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